Annealing effect on perpendicular [CoFe /Pd]nmultilayers
نویسندگان
چکیده
منابع مشابه
CoFe Layers Thickness and Annealing Effect on the Magnetic Behavior of the CoFe/Cu Multilayer Nanowires
CoFe/Cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. Nanowires with 30 nm diameter and the definite lengths were obtained. The effect of CoFe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. The layers thickness was controlled t...
متن کاملcofe layers thickness and annealing effect on the magnetic behavior of the cofe/cu multilayer nanowires
cofe/cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. nanowires with 30 nm diameter and the definite lengths were obtained. the effect of cofe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. the layers thickness was controlled t...
متن کاملOrigin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in STT-MRAM is CoFeB/MgO-based magnetic tunnel junction (MTJ), which possesses a high tunnel magnetoresistance ratio as well as a large value of perpendicular magnetic anisotropy (PMA). It has been experimentally proven th...
متن کاملCurrent-Induced Domain-Wall Motion in [CoFe/Pt] Nanowire With Perpendicular Magnetic Anisotropy
School of Physics, Seoul National University, Seoul 151-742, Republic of Korea Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea Samsung Advanced Institute of Technology, Yongin 449-712, Republic of Korea Department of Materials Science and Engineering, Korea University, Seoul 136-701, Republic of Korea PCTP and Department of Physics, P...
متن کاملIncrease in spin injection efficiency of a CoFe/MgO„100... tunnel spin injector with thermal annealing
Postgrowth thermal annealing of a CoFe/MgOs100d tunnel spin injector grown on a GaAs/AlGaAs quantum well structure results in a significantly increased spin injection efficiency as inferred from the polarization of heavy-hole electroluminescence from a quantum well optical detector. The as-deposited sample displayed an initial polarization at 100 K of 43%, which was increased to 52% after a 1 h...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2011
ISSN: 1742-6596
DOI: 10.1088/1742-6596/303/1/012099